Discrete Semiconductor Products

SI7155DP-T1-GE3

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MOSFET P-CH 40V 31A/100A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 40V 31A/100A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI7155DP-T1-GE3

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI7155DP-T1-GE3	P-Channel	40 V	330 nC	Surface Mount	4.5 V 10 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	-55 °C	150 °C	PowerPAK® SO-8	3.6 mOhm	2.3 V	12900 pF	6.25 W 104 W	20 V

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General part information

P-Channel 40 V 31A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources