RQK0609CQDQS#H1

Obsolete

NCH SINGLE POWER MOSFET 60V 4A 100MOHM UPAK/SC-62

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 60V 4A 100MOHM UPAK/SC-62

Technical Specifications

Parameters and characteristics for this part

Specification	RQK0609CQDQS#H1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	UPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Nch Single Power Mosfet 60V 4A 100Mohm Upak/Sc-62

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature	Package / Case	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Mounting Type
Renesas Electronics Corporation RQK0609CQDQS#H1	2.5 V 4.5 V	5 nC	12 V	150 °C	TO-243AA	UPAK	1.5 W	470 pF	N-Channel	1.4 V	4 A	100 mOhm	60 V	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The RQK0609CQDQS is a Nch Single Power Mosfet 60V 4A 100Mohm Upak/Sc-62.

Technical documentation and resources