Discrete Semiconductor Products

RQK0609CQDQS#H1

Obsolete

NCH SINGLE POWER MOSFET 60V 4A 100MOHM UPAK/SC-62

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 60V 4A 100MOHM UPAK/SC-62

Technical Specifications

Parameters and characteristics for this part

Specification	RQK0609CQDQS#H1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	470 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	UPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Nch Single Power Mosfet 60V 4A 100Mohm Upak/Sc-62

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RQK0609CQDQS#H1	2.5 V	4.5 V	TO-243AA	4 A	1.4 V	MOSFET (Metal Oxide)	60 V	Surface Mount	N-Channel	470 pF	1.5 W	UPAK	150 °C	12 V	5 nC	100 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RQK0609CQDQS is a Nch Single Power Mosfet 60V 4A 100Mohm Upak/Sc-62.

Technical documentation and resources