Specification	FQP3P20

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	2.7 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQP3P20 Series

Power MOSFET, P-Channel, QFET®, -200 V, -2.8 A, 2.7 Ω, TO-220

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor FQP3P20	30 V	10 V	MOSFET (Metal Oxide)	Through Hole	52 W	5 V	TO-220-3	2.8 A	-55 °C	150 °C	200 V	250 pF	8 nC	P-Channel	TO-220-3	2.7 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	422	$ 0.71

Description

General part information

FQP3P20 Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.