Discrete Semiconductor Products
RH7E04BBJFRATCB
ActiveRohm Semiconductor
PCH -30V -40A, DFN3333T8LSAB, POWER MOSFET FOR AUTOMOTIVE
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Discrete Semiconductor Products
RH7E04BBJFRATCB
ActiveRohm Semiconductor
PCH -30V -40A, DFN3333T8LSAB, POWER MOSFET FOR AUTOMOTIVE
Technical Specifications
Parameters and characteristics for this part
| Specification | RH7E04BBJFRATCB |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 65 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2990 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 75 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm |
| Supplier Device Package | DFN3333T8LSAB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 5 V, -20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.21 | |
Description
General part information
RH7E04BBJFRA Series
RH7E04BBJFRA is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for ADAS and Info. and Lighting and Body.
Documents
Technical documentation and resources