Specification	FCPF260N60E-F154

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	260 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCPF260N60E-F154 Series

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F Ultra narrow lead

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FCPF260N60E-F154	-55 °C	150 °C	600 V	62 nC	260 mOhm	TO-220F-3	20 V	Through Hole	3.5 V	15 A	36 W	N-Channel	2500 pF	TO-220-3 Full Pack	MOSFET (Metal Oxide)
ON Semiconductor FCPF260N65FL1	-55 °C	150 °C	650 V		260 mOhm	TO-220F-3	20 V	Through Hole	5 V	15 A	36 W	N-Channel		TO-220-3 Full Pack	MOSFET (Metal Oxide)	10 V	60 nC	2340 pF
ON Semiconductor FCPF260N60E-F152	-55 °C	150 °C	600 V	62 nC	260 mOhm	TO-220F-3		Through Hole	3.5 V	15 A	36 W	N-Channel	2500 pF	TO-220-3 Full Pack	MOSFET (Metal Oxide)
ON Semiconductor FCPF260N65FL1	-55 °C	150 °C	650 V		260 mOhm	TO-220F-3	20 V	Through Hole	5 V	15 A	36 W	N-Channel		TO-220-3 Full Pack	MOSFET (Metal Oxide)	10 V	60 nC	2340 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	1000	$ 2.06
		2500	$ 1.67
		5000	$ 1.62

Description

General part information

FCPF260N60E-F154 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.