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TO-263AB
Discrete Semiconductor Products

IXTA86N20X4

Active
Littelfuse/Commercial Vehicle Products

MOSFET, N-CH, 200V, 86A, TO-263 ROHS COMPLIANT: YES

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TO-263AB
Discrete Semiconductor Products

IXTA86N20X4

Active
Littelfuse/Commercial Vehicle Products

MOSFET, N-CH, 200V, 86A, TO-263 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTA86N20X4
Current - Continuous Drain (Id) @ 25°C86 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC
Input Capacitance (Ciss) (Max) @ Vds2250 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs13 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.99
50$ 6.70
NewarkEach 1$ 11.14
5$ 10.48
10$ 9.82
25$ 9.15
100$ 8.49
500$ 7.69
1000$ 7.06

Description

General part information

IXTA86N20X4 Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources