Discrete Semiconductor Products

R6000GP-TP

Obsolete

DIODE GEN PURP 6KV 200MA DO15

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 6KV 200MA DO15

Technical Specifications

Parameters and characteristics for this part

Specification	R6000GP-TP

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	1.2 µs
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	6000 V
Voltage - Forward (Vf) (Max) @ If	5 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
Micro Commercial Components R6000GP-TP	150 °C	-55 °C	Through Hole	6000 V	Any Speed	200 mA	1.2 µs	Axial DO-15 DO-204AC	200 mA	Standard	DO-15	5 µA	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 6000 V 200mA Through Hole DO-15

Technical documentation and resources

No documents available