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TO-220F
Discrete Semiconductor Products

FDPF035N06B-F154

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ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET

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TO-220F
Discrete Semiconductor Products

FDPF035N06B-F154

Active
ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationFDPF035N06B-F154
Current - Continuous Drain (Id) @ 25°C88 A
Drain to Source Voltage (Vdss)60 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs99 nC
Input Capacitance (Ciss) (Max) @ Vds8030 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)46.3 W
Rds On (Max) @ Id, Vgs3.5 mOhm
Supplier Device PackageTO-220F
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.65
10$ 2.39
100$ 1.67
500$ 1.37
1000$ 1.27
2000$ 1.24
NewarkEach 1000$ 1.65
2500$ 1.33
5000$ 1.29
ON SemiconductorN/A 1$ 1.32

Description

General part information

FDPF035N06B-F154 Series

This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintainingsuperior switching performance.