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TO-262-3 Long Leads
Discrete Semiconductor Products

FQI4N80TU

Obsolete
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3.9A I(D),TO-262AA ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsPackage Drawing-418AV-I2PAK (TO-262 3 LD)Technical Data Sheet EN
TO-262-3 Long Leads
Discrete Semiconductor Products

FQI4N80TU

Obsolete
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3.9A I(D),TO-262AA ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsPackage Drawing-418AV-I2PAK (TO-262 3 LD)Technical Data Sheet EN

Technical Specifications

Parameters and characteristics for this part

SpecificationFQI4N80TU
Current - Continuous Drain (Id) @ 25°C3.9 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]880 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)130 W, 3.13 W
Rds On (Max) @ Id, Vgs3.6 Ohm
Supplier Device PackageTO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FQI4N80 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.