Discrete Semiconductor Products

NP23N06YDG-E1-AY

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MOSFET N-CH 60V 23A 8HSON

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Discrete Semiconductor Products

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MOSFET N-CH 60V 23A 8HSON

Technical Specifications

Parameters and characteristics for this part

Specification	NP23N06YDG-E1-AY

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-SMD, Flat Lead Exposed Pad
Power Dissipation (Max)	1 W, 60 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	8-HSON
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	FET Type	Supplier Device Package
Renesas Electronics Corporation NP23N06YDG-E1-AY	1 W 60 W	MOSFET (Metal Oxide)	23 A	27 mOhm	1800 pF	10 V	5 V	2.5 V	41 nC	8-SMD Flat Lead Exposed Pad	20 V	60 V	175 °C	Surface Mount	N-Channel	8-HSON

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.55

General part information

N-Channel 60 V 23A (Tc) 1W (Ta), 60W (Tc) Surface Mount 8-HSON

Technical documentation and resources