Discrete Semiconductor Products

SI7460DP-T1-E3

LTB

MOSFET N-CH 60V 11A PPAK SO-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 11A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7460DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	9.6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type
Vishay General Semiconductor - Diodes Division SI7460DP-T1-E3	9.6 mOhm	1.9 W	11 A	Surface Mount	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	4.5 V 10 V	3 V	100 nC	60 V	PowerPAK® SO-8	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources