Discrete Semiconductor Products

NTLJS17D0P03P8ZTAG

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PT8 30V WDFN POWER CLIP 2 X 2/ REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

PT8 30V WDFN POWER CLIP 2 X 2/ REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NTLJS17D0P03P8ZTAG

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerWDFN
Power Dissipation (Max)	860 mW
Rds On (Max) @ Id, Vgs	11.3 mOhm
Supplier Device Package	6-PQFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

MOSFET, -30V Single P-Channel, Power Clip22

Part	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor NTLJS17D0P03P8ZTAG	6-PowerWDFN	3 V	-55 °C	150 °C	1600 pF	25 V	30 V	6-PQFN (2x2)	4.5 V 10 V	MOSFET (Metal Oxide)	38 nC	7 A	Surface Mount	860 mW	P-Channel	11.3 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET, -30V Single P-Channel, 11.3mΩ, Power Clip22 (WDFN2x2mm)

Technical documentation and resources