Discrete Semiconductor Products

SI3415CHE3-TP

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P-CHANNEL MOSFET, SOT-23

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Discrete Semiconductor Products

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P-CHANNEL MOSFET, SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	SI3415CHE3-TP

Current - Continuous Drain (Id) @ 25°C	3.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.25 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification
Micro Commercial Components SI3415BS-TP	1.8 V 4.5 V	5.6 A	12.7 nC	900 mV	-55 °C	150 °C	SOT-23	SC-59 SOT-23-3 TO-236-3	10 V	42 mOhm	1180 pF	Surface Mount	1.3 W	20 V	P-Channel	MOSFET (Metal Oxide)
Micro Commercial Components SI3415A-TP	2.5 V 4.5 V	4 A		900 mV	-55 °C	150 °C	SOT-23	SC-59 SOT-23-3 TO-236-3	10 V		950 pF	Surface Mount	1.4 W	20 V	P-Channel	MOSFET (Metal Oxide)	12 nC
Micro Commercial Components SI3415CHE3-TP	1.8 V 4.5 V	3.9 A		1.25 V	-55 °C	150 °C	SOT-23	SC-59 SOT-23-3 TO-236-3	10 V	40 mOhm	540 pF	Surface Mount	1 W	20 V	P-Channel	MOSFET (Metal Oxide)	13 nC	Automotive	AEC-Q101

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General part information

P-Channel 20 V 3.9A (Ta) 1W Surface Mount SOT-23

Technical documentation and resources