Discrete Semiconductor Products

VS-VSKC196/12PBF

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DIODE MOD GP 1200V 97.5A INTAPAK

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Discrete Semiconductor Products

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DIODE MOD GP 1200V 97.5A INTAPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-VSKC196/12PBF

Current - Average Rectified (Io) (per Diode)	97.5 A
Current - Reverse Leakage @ Vr	20 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	INT-A-Pak
Speed [Min]	200 mA, 500 ns
Supplier Device Package	INT-A-PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV

Part	Mounting Type	Diode Configuration	Speed [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io) (per Diode)
Vishay General Semiconductor - Diodes Division VS-VSKC196/08PBF	Chassis Mount	1 Pair Common Cathode	200 mA 500 ns	INT-A-Pak	800 V	175 ░C	-55 °C	INT-A-PAK	20 mA	Standard	97.5 A
Vishay General Semiconductor - Diodes Division VS-VSKC196/12PBF	Chassis Mount	1 Pair Common Cathode	200 mA 500 ns	INT-A-Pak	1.2 kV	175 ░C	-55 °C	INT-A-PAK	20 mA	Standard	97.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 1200 V 97.5A Chassis Mount INT-A-Pak

Technical documentation and resources