Discrete Semiconductor Products

FQPF8P10

Obsolete

ON Semiconductor

100V 5.3A 28W 530MΩ@10V,2.65A 2V 1 PIECE P-CHANNEL TO-220F-3 MOSFETS ROHS

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Discrete Semiconductor Products

FQPF8P10

Obsolete

ON Semiconductor

100V 5.3A 28W 530MΩ@10V,2.65A 2V 1 PIECE P-CHANNEL TO-220F-3 MOSFETS ROHS

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQPF8P10

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	530 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQPF8N60CF Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, FRFET<sup>®</sup>, 600 V, 6.26 A, 1.5 Ω, TO-220F

Part	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Power Dissipation (Max) [Max]
ON Semiconductor FQPF8N60CFT	Through Hole	4 V	36 nC	-55 °C	150 °C	1255 pF	6.26 A	TO-220-3 Full Pack	48 W	N-Channel	1.5 Ohm	600 V	TO-220F-3	10 V	MOSFET (Metal Oxide)	30 V
ON Semiconductor FQPF8P10	Through Hole	4 V		-55 °C	175 ░C	470 pF	5.3 A	TO-220-3 Full Pack		P-Channel	530 mOhm	100 V	TO-220F-3	10 V	MOSFET (Metal Oxide)	30 V	28 W
ON Semiconductor FQPF8P10	Through Hole	4 V		-55 °C	175 ░C	470 pF	5.3 A	TO-220-3 Full Pack		P-Channel	530 mOhm	100 V	TO-220F-3	10 V	MOSFET (Metal Oxide)	30 V	28 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	860	$ 0.41
		860	$ 0.41
LCSC	N/A	1	$ 0.00

Description

General part information

FQPF8N60CF Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Documents

Technical documentation and resources