Discrete Semiconductor Products

IXFT120N15P

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 150V 120A 3-PIN(2+TAB) TO-268

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Discrete Semiconductor Products

IXFT120N15P

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 150V 120A 3-PIN(2+TAB) TO-268

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT120N15P

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	4900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	600 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXFT120N15P Series

DiscMosfetN-CH HiPerFET-Polar TO-268AA

Part	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXFT120N15P	Surface Mount	5 V	TO-268AA	150 V	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	600 W	20 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	150 nC	120 A	N-Channel	16 mOhm	4900 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 10.44
		10	$ 8.84
		25	$ 6.49
		100	$ 6.38
Digikey	Tube	300	$ 7.99
Newark	Each	250	$ 6.98
		500	$ 6.48

Description

General part information

IXFT120N15P Series

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings

Documents

Technical documentation and resources