Specification	FDD5612

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	3.8 W, 42 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDD5612 Series

60V N-Channel PowerTrench® MOSFET 18A, 55mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case
ON Semiconductor FDD5612	5.4 A	TO-252AA	3 V	-55 °C	175 ░C	660 pF	55 mOhm	MOSFET (Metal Oxide)	N-Channel	6 V 10 V	Surface Mount	20 V	60 V	11 nC	3.8 W 42 W	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDD5612 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.