Discrete Semiconductor Products

FGPF50N30TTU

NRND

IGBT, 300V, N-CHANNEL, TO-220AB

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Discrete Semiconductor Products

NRND

IGBT, 300V, N-CHANNEL, TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	FGPF50N30TTU

Current - Collector Pulsed (Icm)	120 A
Gate Charge	97 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	46.8 W
Supplier Device Package	TO-220F-3
Vce(on) (Max) @ Vge, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Mounting Type	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Current - Collector Pulsed (Icm)	Gate Charge
ON Semiconductor FGPF50N30TTU	TO-220F-3	-55 °C	150 °C	TO-220-3 Full Pack	300 V	Trench	Through Hole	1.5 V	46.8 W	120 A	97 nC
ON Semiconductor FGPF50N30TTU	TO-220F-3	-55 °C	150 °C	TO-220-3 Full Pack	300 V	Trench	Through Hole	1.5 V	46.8 W	120 A	97 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench 300 V 46.8 W Through Hole TO-220F-3

Technical documentation and resources

No documents available