Discrete Semiconductor Products

CMH04(TE12L,Q,M)

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DIODE GEN PURP 200V 1A M-FLAT

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 1A M-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CMH04(TE12L,Q,M)

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 ÁA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	M-FLAT
Supplier Device Package [x]	2.4
Supplier Device Package [y]	3.8
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Diodes, 200 V/1 A Rectifier Diode, M-FLAT

Part	Current - Average Rectified (Io)	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Reverse Recovery Time (trr)	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]
Toshiba Semiconductor and Storage CMH04(TE12L,Q,M)	1 A	200 mA 500 ns	-40 °C	150 °C	Standard	Surface Mount	200 V	10 ÁA	SOD-128	35 ns	M-FLAT	2.4	3.8

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General part information

Diodes, 200 V/1 A Rectifier Diode, M-FLAT

Technical documentation and resources

No documents available