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Technical Specifications
Parameters and characteristics for this part
| Specification | LGB8207TH |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Grade | Automotive |
| Input Type | Logic |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 165 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-263 (D2PAK) |
| Td (on/off) @ 25°C [custom] | 4.7 µs |
| Td (on/off) @ 25°C [custom] | 0.65 µs |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 365 V |
Pricing
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Description
General part information
LGB8207TH Series
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive
Documents
Technical documentation and resources