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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

NTP360N80S3Z

NRND
ON Semiconductor

MOSFET – POWER, N-CHANNEL, SUPERFET® III, 800 V, 13 A, 360 MΩ, TO-220

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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

NTP360N80S3Z

NRND
ON Semiconductor

MOSFET – POWER, N-CHANNEL, SUPERFET® III, 800 V, 13 A, 360 MΩ, TO-220

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTP360N80S3Z
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25.3 nC
Input Capacitance (Ciss) (Max) @ Vds1143 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)96 W
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.34
10$ 2.86
100$ 2.03
500$ 1.67
1000$ 1.56
NewarkEach 1$ 4.99
10$ 4.71
25$ 4.21
50$ 3.91
100$ 3.59
250$ 3.06
500$ 3.05
ON SemiconductorN/A 1$ 1.44

Description

General part information

NTP360N80S3Z Series

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantlyimproves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrialpower supplies.