Discrete Semiconductor Products

HER306GT-G

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DIODE SWITCHING 600V 3A 2-PIN DO-27 T/R

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Discrete Semiconductor Products

Active

DIODE SWITCHING 600V 3A 2-PIN DO-27 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	HER306GT-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-27
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Mounting Type
Comchip Technology HER306GT-G	3 A	1.3 V	600 V	DO-27	200 mA 500 ns	150 °C	-55 °C	Standard	5 µA	75 ns	Axial DO-201AA DO-27	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Through Hole DO-27

Technical documentation and resources

No documents available