Discrete Semiconductor Products

NTR5198NLT1G

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POWER MOSFET, N CHANNEL, 60 V, 2.2 A, 155 MILLIOHMS, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 60 V, 2.2 A, 155 MILLIOHMS, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTR5198NLT1G

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds	182 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	900 mW
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Single N−Channel Logic Level Power MOSFET 60V, 2.2A, 155mΩ

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor NTR5198NLT1G	20 V	155 mOhm	900 mW	-55 °C	150 °C	1.7 A	60 V	SC-59 SOT-23-3 TO-236-3	N-Channel	4.5 V 10 V	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	2.8 nC	182 pF	2.5 V	Surface Mount

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General part information

Power MOSFET60 V, 155 m, Single N−Channel Logic LevelSOT−23

Technical documentation and resources