Discrete Semiconductor Products

RJK0654DPB-00#J5

Active

NCH POWER MOSFET 60V 30A 8.3MOHM LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

NCH POWER MOSFET 60V 30A 8.3MOHM LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0654DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	55 W
Rds On (Max) @ Id, Vgs	8.3 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 60V 30A 8.3mohm LFPAK56

Part	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation RJK0654DPB-00#J5	SC-100 SOT-669	8.3 mOhm	150 °C	20 V	27 nC	2000 pF	10 V	55 W	60 V	N-Channel	LFPAK	Surface Mount	MOSFET (Metal Oxide)	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources