Specification	FQB34N20TM-AM002

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.13 W, 180 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQB34N20L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK

Part	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQB34N20TM-AM002	Surface Mount	MOSFET (Metal Oxide)	200 V	3.13 W 180 W	30 V	10 V	-55 °C	150 °C	TO-263 (D2PAK)	N-Channel	78 nC	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3100 pF	31 A	75 mOhm
ON Semiconductor FQB34N20LTM	Surface Mount	MOSFET (Metal Oxide)	200 V	3.13 W 180 W	20 V		-55 °C	150 °C	TO-263 (D2PAK)	N-Channel		2 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3900 pF	31 A	75 mOhm	72 nC	10 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQB34N20L Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.