Discrete Semiconductor Products

FDZ663P

Obsolete

MOSFET P-CH 20V 2.7A 4WLCSP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.7A 4WLCSP

Technical Specifications

Parameters and characteristics for this part

Specification	FDZ663P

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	525 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	WLCSP, 4-XFBGA
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs [Max]	134 mOhm
Supplier Device Package	4-WLCSP (0.8x0.8)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Technology
ON Semiconductor FDZ663P	-55 °C	150 °C	8 V	4-WLCSP (0.8x0.8)	134 mOhm	Surface Mount	525 pF	20 V	P-Channel	1.2 V	2.7 A	1.5 V 4.5 V	1.3 W	4-XFBGA WLCSP	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.7A (Ta) 1.3W (Ta) Surface Mount 4-WLCSP (0.8x0.8)

Technical documentation and resources

No documents available