
Discrete Semiconductor Products
MBRB2535CTLT4G
ObsoleteON Semiconductor
SCHOTTKY BARRIER RECTIFIER, 35 V, 25 A
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Discrete Semiconductor Products
MBRB2535CTLT4G
ObsoleteON Semiconductor
SCHOTTKY BARRIER RECTIFIER, 35 V, 25 A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MBRB2535CTLT4G |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 12.5 A |
| Current - Reverse Leakage @ Vr | 10 mA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 125 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | D2PAK |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 35 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBRB2535CTL Series
This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal.
Documents
Technical documentation and resources