Discrete Semiconductor Products

KSD882YSTU

LTB

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 3 A, 10 W, TO-126, THROUGH HOLE

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Discrete Semiconductor Products

LTB

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 3 A, 10 W, TO-126, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	KSD882YSTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	90 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

NPN Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type
ON Semiconductor KSD882YSTU	30 V	90 MHz	3 A	TO-126-3	-55 °C	150 °C	160	TO-126-3 TO-225AA	500 mV	1 W	NPN	1 µA	Through Hole
ON Semiconductor KSD882YSTSSTU	30 V	90 MHz	3 A	TO-126-3	-55 °C	150 °C	160	TO-126-3 TO-225AA	500 mV	1 W	NPN	1 µA	Through Hole
ON Semiconductor KSD882YS	30 V	90 MHz	3 A	TO-126-3	-55 °C	150 °C	160	TO-126-3 TO-225AA	500 mV	1 W	NPN	1 µA	Through Hole
ON Semiconductor KSD882YSTSTU	30 V	90 MHz	3 A	TO-126-3	-55 °C	150 °C	160	TO-126-3 TO-225AA	500 mV	1 W	NPN	1 µA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources