Discrete Semiconductor Products

IRFP460C

Obsolete

MOSFET N-CH 500V 20A TO3P

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 20A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP460C

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	235 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor IRFP460_R4943	TO-247-3	N-Channel	4 V	500 V	190 nC	Through Hole	20 A	MOSFET (Metal Oxide)	TO-247-3	270 mOhm	4100 pF
ON Semiconductor IRFP460C	SC-65-3 TO-3P-3	N-Channel	4 V	500 V		Through Hole	20 A	MOSFET (Metal Oxide)	TO-3P	240 mOhm	6000 pF	235 W	30 V	170 nC	-55 °C	150 °C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 20A (Tc) 235W (Tc) Through Hole TO-3P

Technical documentation and resources