Discrete Semiconductor Products

PMZB1200UPEYL

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MOSFET P-CH 30V 410MA DFN1006B-3

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Discrete Semiconductor Products

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MOSFET P-CH 30V 410MA DFN1006B-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB1200UPEYL

Current - Continuous Drain (Id) @ 25°C	410 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	1.67 W, 310 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type
Freescale Semiconductor - NXP PMZB1200UPEYL	1.67 W 310 mW	410 mA	950 mV	3-XFDFN	1.5 V 4.5 V	8 V	-55 °C	150 °C	P-Channel	MOSFET (Metal Oxide)	DFN1006B-3	43.2 pF	1.2 nC	30 V	1.4 Ohm	Surface Mount

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General part information

P-Channel 30 V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006B-3

Technical documentation and resources