Discrete Semiconductor Products

RJK0601DPN-E0#T2

Obsolete

NCH SINGLE POWER MOSFET 60V 110A 3.1MOHM TO-220AB

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 60V 110A 3.1MOHM TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0601DPN-E0#T2

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	141 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	10000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	TO-220ABS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 60V 110A 3.1Mohm To-220Ab

Part	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Supplier Device Package	Technology
Renesas Electronics Corporation RJK0601DPN-E0#T2	60 V	TO-220-3	10 V	110 A	150 °C	N-Channel	20 V	141 nC	3.1 mOhm	Through Hole	10000 pF	200 W	TO-220AB	MOSFET (Metal Oxide)
Renesas Electronics Corporation RJK0601DPN-E0#T2	60 V	TO-220-3	10 V	110 A	150 °C	N-Channel	20 V	141 nC	3.1 mOhm	Through Hole	10000 pF	200 W	TO-220ABS	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The RJK0601DPN-E0 is a Nch Single Power Mosfet 60V 110A 3.1Mohm To-220Ab.

Technical documentation and resources