Discrete Semiconductor Products

PSMN013-100XS,127

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 100V 35.2A TO220F

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Discrete Semiconductor Products

PSMN013-100XS,127

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 100V 35.2A TO220F

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN013-100XS,127

Current - Continuous Drain (Id) @ 25°C	35.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57.5 nC
Input Capacitance (Ciss) (Max) @ Vds	3195 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	48.4 W
Rds On (Max) @ Id, Vgs	13.9 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN0 Series

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Freescale Semiconductor - NXP PSMN013-30LL,115	Surface Mount	8-VDFN Exposed Pad	21 A	20 V	N-Channel	MOSFET (Metal Oxide)	13 mOhm	2.15 V	12.2 nC	4.5 V 10 V	30 V	768 pF	8-DFN3333	41 W	-55 °C	150 °C
Freescale Semiconductor - NXP PSMN004-55W,127	Through Hole	TO-247-3	100 A	15 V	N-Channel	MOSFET (Metal Oxide)				4.5 V 10 V	55 V	13000 pF	TO-247	300 W	-55 °C	175 ░C	4.2 mOhm	2 V	226 nC
Freescale Semiconductor - NXP PSMN004-36B,118	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 A	15 V	N-Channel	MOSFET (Metal Oxide)	4 mOhm		97 nC	4.5 V 10 V	36 V	6000 pF	D2PAK	230 W	-55 °C	175 ░C		2 V
Freescale Semiconductor - NXP PSMN023-80LS,115	Surface Mount	8-VDFN Exposed Pad	34 A	20 V	N-Channel	MOSFET (Metal Oxide)	23 mOhm		21 nC	10 V	80 V	1295 pF	8-DFN3333		-55 °C	150 °C				65 W
Freescale Semiconductor - NXP PSMN040-200W,127	Through Hole	TO-247-3	50 A	20 V	N-Channel	MOSFET (Metal Oxide)	40 mOhm			10 V	200 V	9530 pF	TO-247	300 W	-55 °C	175 ░C			183 nC
Freescale Semiconductor - NXP PSMN035-100LS,115	Surface Mount	8-VDFN Exposed Pad	27 A	20 V	N-Channel	MOSFET (Metal Oxide)	32 mOhm			10 V	100 V	1350 pF	8-DFN3333		-55 °C	150 °C			23 nC	65 W
Freescale Semiconductor - NXP PSMN013-100XS,127	Through Hole	TO-220-3 Full Pack Isolated Tab	35.2 A	20 V	N-Channel	MOSFET (Metal Oxide)	13.9 mOhm			10 V	100 V	3195 pF	TO-220F	48.4 W	-55 °C	175 ░C			57.5 nC
Freescale Semiconductor - NXP PSMN012-25YLC,115	Surface Mount	SC-100 SOT-669	33 A	20 V	N-Channel	MOSFET (Metal Oxide)	12.6 mOhm		8.3 nC	4.5 V 10 V	25 V		LFPAK56 Power-SO8		-55 °C	175 ░C				26 W	528 pF
Freescale Semiconductor - NXP PSMN020-150W,127	Through Hole	TO-247-3	73 A	20 V	N-Channel	MOSFET (Metal Oxide)	20 mOhm		227 nC	10 V	150 V	9537 pF	TO-247	300 W	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN023-40YLCX	Surface Mount	SC-100 SOT-669	24 A	20 V	N-Channel	MOSFET (Metal Oxide)			8.4 nC	4.5 V 10 V	40 V	520 pF	LFPAK56 Power-SO8		-55 °C	175 ░C	23 mOhm			25 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

PSMN0 Series

N-Channel 100 V 35.2A (Tc) 48.4W (Tc) Through Hole TO-220F

Documents

Technical documentation and resources