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Technical Specifications
Parameters and characteristics for this part
| Specification | DRV8770RGER |
|---|---|
| Applications | DC Motors, General Purpose |
| Current - Output / Channel | 1.5 A |
| Current - Peak Output | 1.5 A |
| Fault Protection | Shoot-Through |
| Interface | Logic, Analog, PWM |
| Load Type | Capacitive, Inductive, Resistive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 24-VFQFN Exposed Pad |
| Supplier Device Package | 24-VQFN (4x4) |
| Technology | Power MOSFET, NMOS |
| Voltage - Load [Max] | 20 V |
| Voltage - Load [Min] | 5 V |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.09 | |
| 10 | $ 2.01 | |||
| 25 | $ 1.73 | |||
| 100 | $ 1.41 | |||
| 250 | $ 1.25 | |||
| 500 | $ 1.16 | |||
| 1000 | $ 1.08 | |||
| Digi-Reel® | 1 | $ 3.09 | ||
| 10 | $ 2.01 | |||
| 25 | $ 1.73 | |||
| 100 | $ 1.41 | |||
| 250 | $ 1.25 | |||
| 500 | $ 1.16 | |||
| 1000 | $ 1.08 | |||
| Tape & Reel (TR) | 3000 | $ 0.98 | ||
| 6000 | $ 0.93 | |||
| 9000 | $ 0.91 | |||
| Texas Instruments | LARGE T&R | 1 | $ 1.69 | |
| 100 | $ 1.40 | |||
| 250 | $ 1.00 | |||
| 1000 | $ 0.76 | |||
Description
General part information
DRV8770 Series
The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
Documents
Technical documentation and resources