Discrete Semiconductor Products

SIRA58DP-T1-GE3

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MOSFET N-CH 40V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA58DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	3750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	27.7 W
Rds On (Max) @ Id, Vgs [Max]	2.65 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIRA58DP-T1-GE3	PowerPAK® SO-8	N-Channel	2.4 V	-16 V 20 V	PowerPAK® SO-8	40 V	MOSFET (Metal Oxide)	4.5 V 10 V	-55 °C	150 °C	2.65 mOhm	3750 pF	27.7 W	Surface Mount	75 nC	60 A

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General part information

N-Channel 40 V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources