SQJ403EP-T1_GE3

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MOSFET P-CH 30V 30A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 30V 30A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ403EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	109 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Grade	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package
Vishay General Semiconductor - Diodes Division SQJ403EP-T1_GE3	Automotive	MOSFET (Metal Oxide)	4.5 V 10 V	68 W	P-Channel	PowerPAK® SO-8	8.5 mOhm	AEC-Q101	20 V	30 A	-55 °C	175 ░C	2.5 V	30 V	109 nC	4500 pF	Surface Mount	PowerPAK® SO-8

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General part information

P-Channel 30 V 30A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources