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TO-252-3 SC-63
Discrete Semiconductor Products

NVD5C632NLT4G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 60V, 155A, 2.5MΩ

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TO-252-3 SC-63
Discrete Semiconductor Products

NVD5C632NLT4G

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 60V, 155A, 2.5MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVD5C632NLT4G
Current - Continuous Drain (Id) @ 25°C29 A, 155 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]78 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds5700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)4 W
Power Dissipation (Max)115 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.48
10$ 2.96
100$ 2.10
500$ 1.73
1000$ 1.63
Digi-Reel® 1$ 4.48
10$ 2.96
100$ 2.10
500$ 1.73
1000$ 1.63
Tape & Reel (TR) 2500$ 1.63
NewarkEach 2500$ 1.75
5000$ 1.70
ON SemiconductorN/A 1$ 1.50

Description

General part information

NVD5C632NL Series

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.