Discrete Semiconductor Products

NTMS3P03R2G

Obsolete

POWER MOSFET 30V 3.05A 85 MOHM SINGLE P-CHANNEL SO-8

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Discrete Semiconductor Products

Obsolete

POWER MOSFET 30V 3.05A 85 MOHM SINGLE P-CHANNEL SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS3P03R2G

Current - Continuous Drain (Id) @ 25°C	2.34 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	730 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Power MOSFET 30V 3.05A 85 mOhm Single P-Channel SO-8

Part	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
ON Semiconductor NTMS3P03R2	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	30 V	25 nC	730 mW	20 V	8-SOIC	P-Channel	-55 °C	150 °C	2.34 A	4.5 V 10 V	Surface Mount	750 pF	85 mOhm	2.5 V
ON Semiconductor NTMS3P03R2G	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	30 V	25 nC	730 mW	20 V	8-SOIC	P-Channel	-55 °C	150 °C	2.34 A	4.5 V 10 V	Surface Mount	750 pF	85 mOhm	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel SO-8

Technical documentation and resources