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R6014YNX3C16

Discrete Semiconductor Products

R6524KNX3C16

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Rohm Semiconductor

650V 24A, TO-220AB, HIGH-SPEED SWITCHING POWER MOSFET

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Search across all available documentation for this part.

DocumentsMOSFET Gate Drive Current Setting for Motor Driving Impedance Characteristics of Bypass Capacitor +30

R6014YNX3C16

Discrete Semiconductor Products

R6524KNX3C16

Active

Rohm Semiconductor

650V 24A, TO-220AB, HIGH-SPEED SWITCHING POWER MOSFET

Deep-Dive with AI

DocumentsMOSFET Gate Drive Current Setting for Motor Driving Impedance Characteristics of Bypass Capacitor +30

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6524KNX3C16

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	253 W
Rds On (Max) @ Id, Vgs	185 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.47
		10	$ 3.64
		100	$ 2.61
		500	$ 2.17
	Tape & Reel (TR)	1000	$ 2.05
Newark	Each	1	$ 5.64
		10	$ 3.76
		25	$ 3.41
		50	$ 3.06
		100	$ 2.70
		250	$ 2.70
		500	$ 2.69

Description

General part information

R6524KNZ4 Series

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Documents

Technical documentation and resources

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

TO-220AB Reliability Test Result

Manufacturing Data

PCB Layout Thermal Design Guide

Notes for Temperature Measurement Using Thermocouples

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

How to Use the Thermal Resistance and Thermal Characteristics Parameters

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Condition of Soldering / Land Pattern Reference

Package Information

Types and Features of Transistors

Application Note

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

About Export Regulations

Export Information

Moisture Sensitivity Level - Transistors

Package Information

Part Explanation

Application Note

About Flammability of Materials

Environmental Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

TO-220AB Inner Structure

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Judgment Criteria of Thermal Evaluation

Report of SVHC under REACH Regulation

Environmental Data

R6524KNX3 Data Sheet

Measurement Method and Usage of Thermal Resistance RthJC

What Is Thermal Design

R6524KNX3 ESD Data

Characteristics Data

List of Transistor Package Thermal Resistance

Two-Resistor Model for Thermal Simulation

Method for Monitoring Switching Waveform

Schematic Design & Verification

TO-220AB Explanation for Marking

Package Information

What is a Thermal Model? (Transistor)

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

R6524KNZ4 Series

650V 24A, TO-220AB, High-speed switching Power MOSFET

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature	Vgs (Max)	Mounting Type	Power Dissipation (Max) [Max]
Rohm Semiconductor R6524KNX3C16	650 V	24 A	TO-220AB	185 mOhm	253 W	45 nC	N-Channel	MOSFET (Metal Oxide)	10 V	1850 pF	TO-220-3	5 V	150 °C	20 V	Through Hole
Rohm Semiconductor R6524ENXC7G	650 V	24 A	TO-220FM	185 mOhm		70 nC	N-Channel	MOSFET (Metal Oxide)	10 V	1650 pF	TO-220-3 Full Pack	4 V	150 °C	20 V	Through Hole	74 W
Rohm Semiconductor R6524KNZ4C13	650 V	24 A	TO-247G	185 mOhm	245 W	45 nC	N-Channel	MOSFET (Metal Oxide)	10 V	1850 pF	TO-247-3	5 V	150 °C	20 V	Through Hole
Rohm Semiconductor R6524ENZ4C13	650 V	24 A	TO-247G	185 mOhm	245 W	70 nC	N-Channel	MOSFET (Metal Oxide)	10 V	1650 pF	TO-247-3	4 V	150 °C	20 V	Through Hole