Specification	NTNS3C94NZT5G

Current - Continuous Drain (Id) @ 25°C	384 mA
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	35 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	120 mW
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	3-XLLGA (0.62x0.62)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NTNS3C94NZ Series

Single N−Channel Small Signal MOSFET 12V, 384mA, 480mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
ON Semiconductor NTNS3C94NZT5G	0.6 nC	8 V	120 mW	1.5 V 4.5 V	N-Channel	-55 °C	150 °C	Surface Mount	1 V	35 pF	12 V	3-XLLGA (0.62x0.62)	3-XFDFN	MOSFET (Metal Oxide)	384 mA	480 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Small Signal MOSFET12 V, 384 mA, Single N−Channel,0.62 x 0.62 x 0.4 mm XLLGA3 Package