Specification	UPD48576236F1-E18-DW1-A

Clock Frequency	533 MHz
Memory Format	DRAM
Memory Interface	HSTL
Memory Organization	16M x 36
Memory Size	576 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	95 °C
Operating Temperature [Min]	0 °C
Package / Case	144-TBGA
Supplier Device Package	144-TFBGA (11x18.5)
Technology	LLDRAM
Voltage - Supply [Max]	1.9 V
Voltage - Supply [Min]	1.7 V

UPD48576236F1-E18-DW1-A Series

576M-BIT Low Latency DRAM Common I/O

Part	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Supplier Device Package	Technology	Memory Format	Clock Frequency	Memory Organization	Memory Size	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type
Renesas Electronics Corporation UPD48576236F1-E18-DW1-A	HSTL	1.7 V	1.9 V	Surface Mount	144-TFBGA (11x18.5)	LLDRAM	DRAM	533 MHz	16M x 36	576 Mbit	144-TBGA	95 °C	0 °C	Volatile

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4686	$ 85.90

Description

General part information

UPD48576236F1-E18-DW1-A Series

The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration.

Documents

Technical documentation and resources

UPD48576209F1, UPD48576218F1, UPD48576236F1 Datasheet

Datasheet