Discrete Semiconductor Products

FGY100T120RWD

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1200V 100A TRENCH FIELD STOP VII (FS7) DISCRETE IGBT IN POWER TO247-3L PACKAGING

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Discrete Semiconductor Products

Active

1200V 100A TRENCH FIELD STOP VII (FS7) DISCRETE IGBT IN POWER TO247-3L PACKAGING

Technical Specifications

Parameters and characteristics for this part

Specification	FGY100T120RWD

Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	427 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	1495 W
Reverse Recovery Time (trr)	347 ns
Supplier Device Package	TO-247-3
Switching Energy	8.13 mJ, 7.05 mJ
Td (on/off) @ 25°C	364 ns
Td (on/off) @ 25°C	80 ns
Test Condition	15 V, 600 V, 4.7 Ohm, 100 A
Vce(on) (Max) @ Vge, Ic	1.75 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

1200V 100A Trench Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging

Part	Gate Charge	Switching Energy	Power - Max [Max]	Test Condition	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	IGBT Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FGY100T120RWD	427 nC	7.05 mJ 8.13 mJ	1495 W	4.7 Ohm 15 V 100 A 600 V	TO-247-3	364 ns	80 ns	300 A	Through Hole	-55 °C	175 ░C	200 A	347 ns	TO-247-3 Variant	Field Stop	1.75 V	1200 V

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General part information

1200V 100A Trench Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging

Technical documentation and resources