Discrete Semiconductor Products

SIS427EDN-T1-GE3

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MOSFET P-CH 30V 50A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET P-CH 30V 50A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS427EDN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	1930 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	10.6 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Vishay General Semiconductor - Diodes Division SIS427EDN-T1-GE3	2.5 V	25 V	PowerPAK® 1212-8	66 nC	PowerPAK® 1212-8	3.7 W 52 W	50 A	10.6 mOhm	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	1930 pF	30 V	4.5 V 10 V	P-Channel

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General part information

P-Channel 30 V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources