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FAIFSCHGTP7N60B3D
Discrete Semiconductor Products

BYT28-300,127

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NXP USA Inc.

DIODE ARRAY GP 300V 10A TO220AB

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FAIFSCHGTP7N60B3D
Discrete Semiconductor Products

BYT28-300,127

Active
NXP USA Inc.

DIODE ARRAY GP 300V 10A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYT28-300,127
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage10 µA
Diode ConfigurationCommon Cathode
Diode Pair Count1 pair
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Package / CaseTO-220-3
Package NameTO-220AB
Reverse Recovery Time (trr)60 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)300 V
Voltage - Forward (Vf) (Max)1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 591$ 0.511m+
N/A 0$ 0.441m+
1000$ 0.75
Tube 6000$ 0.461m+

CAD

3D models and CAD resources for this part

Description

General part information

BYT28 Series

Diode Array 1 Pair Common Cathode 300 V 10A Through Hole TO-220-3

Documents

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