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Technical Specifications
Parameters and characteristics for this part
| Specification | RQ5P010SNTL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 140 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-96 |
| Power Dissipation (Max) [Max] | 700 mW |
| Rds On (Max) @ Id, Vgs | 520 mOhm |
| Supplier Device Package | TSMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ5P010SN Series
RQ5P010SN is a MOSFET with G-S Protection Diode and low on-switching, suitable for DC/DC Converter.
Documents
Technical documentation and resources