Discrete Semiconductor Products

NTMFD4902NFT3G

Obsolete

MOSFET 2N-CH 30V 10.3A 8DFN

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 10.3A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFD4902NFT3G

Configuration	2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C	13.3 A, 10.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	9.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	1.16 W, 1.1 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Configuration	Supplier Device Package	FET Feature	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Power - Max
ON Semiconductor NTMFD4902NFT3G	6.5 mOhm	2.2 V	2 N-Channel (Dual) Schottky	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	Logic Level Gate	Surface Mount	10.3 A 13.3 A	1150 pF	30 V	8-PowerTDFN	-55 °C	150 °C	9.7 nC	MOSFET (Metal Oxide)	1.1 W 1.16 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 10.3A, 13.3A 1.1W, 1.16W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Technical documentation and resources