Discrete Semiconductor Products

HAT2197R-EL-E

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NCH SINGLE POWER MOSFET 30V 16A 6.7MOHM SOP8

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Discrete Semiconductor Products

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NCH SINGLE POWER MOSFET 30V 16A 6.7MOHM SOP8

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2197R-EL-E

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	2650 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	6.7 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 30V 16A 6.7Mohm Sop8

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology
Renesas Electronics Corporation HAT2197R-EL-E	6.7 mOhm	20 V	150 °C	30 V	2.5 W	8-SOIC	3.9 mm	0.154 in	N-Channel	Surface Mount	18 nC	2650 pF	8-SOP	4.5 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The HAT2197R is a Nch Single Power Mosfet 30V 16A 6.7Mohm Sop8.

Technical documentation and resources