Discrete Semiconductor Products

MMBT2132T3G

Obsolete

BIPOLAR JUNCTION TRANSISTOR

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Discrete Semiconductor Products

Obsolete

BIPOLAR JUNCTION TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MMBT2132T3G

Current - Collector (Ic) (Max) [Max]	700 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150 hFE
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power - Max [Max]	342 mW
Supplier Device Package	SC-74
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Bipolar Junction Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor MMBT2132T3G	150 hFE	342 mW	NPN	Surface Mount	SC-74	-55 °C	150 °C	700 mA	400 mV	SC-74 SOT-457	1 µA	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

General Purpose Transistors

Technical documentation and resources