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Technical Specifications
Parameters and characteristics for this part
| Specification | FGA20S140P |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Gate Charge | 203.5 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 272 W |
| Supplier Device Package | TO-3PN |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FGA20S140P Series
Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
Documents
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