Discrete Semiconductor Products
RGSX5TS65DHRC11
ActiveRohm Semiconductor
INSULATED GATE BIPOLAR TRANSISTOR, 114A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN
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Discrete Semiconductor Products
RGSX5TS65DHRC11
ActiveRohm Semiconductor
INSULATED GATE BIPOLAR TRANSISTOR, 114A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGSX5TS65DHRC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 114 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Gate Charge | 79 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 404 W |
| Reverse Recovery Time (trr) | 114 ns |
| Supplier Device Package | TO-247N |
| Switching Energy | 1.9 mJ, 3.32 mJ |
| Td (on/off) @ 25°C | 43 ns, 113 ns |
| Test Condition | 75 A, 15 V, 10 Ohm, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.15 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGSX5TS65DHR Series
RGSX5TS65DHR is a 8μs SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
Documents
Technical documentation and resources