Discrete Semiconductor Products

IRL3402L

Unknown

MOSFET N-CH 20V 85A TO262-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

MOSFET N-CH 20V 85A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRL3402L

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	78 nC
Input Capacitance (Ciss) (Max) @ Vds	3300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs [Max]	8 mOhm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	700 mV

Part	Technology	Vgs (Max)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division IRL3402L	MOSFET (Metal Oxide)	10 V	N-Channel	Through Hole	3300 pF	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	150 °C	700 mV	85 A	110 W	TO-262-3	20 V	78 nC	8 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 85A (Tc) 110W (Tc) Through Hole TO-262-3

Technical documentation and resources